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Journal of Microelectronics and Solid State Devices

SJIF 2024:
Under evaluation
Area: Science
Evaluated version: online
Previous evaluation SJIF
2023: Not indexed
2022: 6.031
2021: 6.034
2020: 6.06
The journal is indexed in:
Basic information  
Main title Journal of Microelectronics and Solid State Devices
ISSN 2455-3336 (E)
Country  India
Frequency 3 times a year
License Free for non-commercial use
Texts availability Paid
Contact Details  
Editor-in-chief Electronics Dr P. K. Chaturvedi
  Professor & HOD SRM University, NCR Campus, Modinagar, Ghaziabad, Uttar Pradesh- 201204, India.
Publisher STM Journals, An Imprint Of Consortium E-Learning Network Pvt. Ltd.
  A-118, 1st Floor, Sector-63, Noida, U.P. India, Pin – 201301
Journal's description  
Journal of Microelectronics and Solid-State Devices [2455-3336(e)] is a peer-reviewed hybrid open-access journal launched in 2014 focused on the rapid publication of fundamental research papers on all areas of Solid state, Electronics, and Devices.

Focus and Scope
Solid-State Devices: Semiconductors, Transistors, integrated circuits, capacitors, resistors.

Light-Emitting diodes: semiconductor light source, photons, Infrared LEDs, photodiodes, electroluminescence, spectrum, RGB diodes, phosphor-converted white LEDs, organic light-emitting diode,

Liquid-Crystal Display: liquid crystals, polarizers, quantum dot displays, photolithography, birefringence, cold cathode fluorescent lamps, EL-WLED, elastomeric connectors, passive-matrix LCDs, Active-matrix liquid-crystal display, Thin-film-transistor liquid-crystal display.

Transistor amplifiers: amplifier, voltage, current, power, audio amplifier (AF), radio (RF) amplifiers, Gain,

Microelectronic circuits: silicon diodes and transistors, circuit analysis and design, MOSFET, bipolar junction transistor (BJT), Signals, frequency response amplifiers, Frequency Spectrum of Signals, Digital Logic Inverters, Circuit Simulation Using SPICE, Analog and Digital Signals, SPICE, Amplifiers, Circuit Models for Amplifiers.

Electronic band structure: Band theory, electrical resistivity, optical absorption, electrical conductivity.

Electrons: electric forces, electric charges, free electrons, atomic theory, quantum mechanics, atoms and molecules, conductivity, motion, and energy.

Energy bands: Valance Electrons, Valence Band, Conduction Electrons, Conduction Band, forbidden energy gap.

Metal-oxide-Semiconductor Capacitor: Flat-Band Condition and Flat-Band Voltage, Surface Accumulation, Surface Depletion, Threshold Condition, and Threshold Voltage, MOS C–V Characteristics, CCD Imager and CMOS Imager.

Nano MOSFETs: Silicon, Nanostructured materials, Nanoscale devices, Optical scattering, Particle scattering, Acoustic scattering, Mie scattering, Dielectric substrates, Quantization.

Device modeling: Diode modeling, Transistor models, Physics driven device modeling, circuit-level compact models, Technology CAD.

Bipolar Transistor Devices: bipolar transistors, the function of bipolar transistors, structures of bipolar transistors, characteristics of bipolar transistors, region of operation, amplification of signals, switching, digital circuits.

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